Question # 1

Which component of the transistor has greater contrition of impurity.

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Base

Emitter

Collector

Emitter and collector

The use of LDR is in the circuit of.

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Logic gate

Rectifier

Oscillator

High Switch

The negative of the potential gradient is

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Electrostatic force

Electromotive force

Potential difference

Electric field intensity

The ratio of applies stress to volumetric strain is called:

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Young modulus

Shear modulus

Bulk modulus

Tensile modulus

The relative permitivity of air is

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79.5

1.006

1.06

1.0006

A wire uniform cross-section. A length L and resistance R is cut into two equal parts. The resistivity of each part will be:

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Doubled

Halved

Remain the same

One fourth

A metal rod of 1 m is moving at a speed of 1 ms-1 in a direction making an angle 30^o with 0.5 T magnetic field . The emf produced is.

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0.25 N

2.5 N

0.25 V

2.5 V

The force on a charge particle moving parallel to magnetic field is:

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Maximum

Minimum

Zero

None of these

For computation of electric flux, the surface area should be.

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Parallel

Flat

Curved

Spherical

Electrons are

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Hadrons

Laptons

Quarks

Baryons

Torque on a current carrying coil

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τ=IBA cos

τ = ILB sinα

τ = IBA sinα

τ = ILBcosα

The power factor of RL series circuit is.

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0

1

Less then 1

More than one

Production of x rays is reverse process of

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Photo electric effect

Compton effect

An nihilation

Pair production

Unit of impedance is:

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Ohm

Ohm^-1

no unit

Ohm m^-1

If a charge Q flows through any cross section of the conductor in time t, the current I is

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I=Qt

The magnetic field is uniform and stronger

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Outside the solenoid

Inside the solenoid

At the central part of the solenoid

None of these

The electrostatic force between two charges is 42 N, If we place a dielectric of E_y=2.1 between the charges then the force become equal to.

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42 N

88.2 N

20 N

2 N

e/m=

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v/Br

Br/V

VB/r

Vr/B

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