Question # 1

NAND gate represented by:

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X = A. B

X = A+B

X= A.B

X=|A+B|

The central region of a transistor is called.

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Emitter

Collector

Base

Neutral

The output from a full wave rectifier is

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An ac voltage

A dc voltage

Zero

A pulsating unidirectional voltage

Base of transistor is of order:

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10^-11m

10⁶m

10^-8m

10^-6m

The P.D develop in case of germanium is:

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0.3

0.7

0.5

0.9

The circuit of full wave rectification consist of

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Three diodes

Four diodes

Two diodes

One diode

Which diode works at reverse biasing.

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LED

Photo voltaic cell

Photo diode

Silicon diode

A light emitting diode emits light only when

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Reverse biased

Forward biased

Unbiased

None of these

_______ is the building block of every electronic circuit.

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Semi conductor diode

Resistor

Capacitor

Amplifier

Output resistance of an op amp is

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High

Low

Zero

Equal to input resistance

The reverse saturation current in a PN junction diode is only due to:

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Majority carriers

Minoritycarriers

Acceptor ions

Donor ions

The chargeless region after formation of Pn junction is called:

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Free region

Depletion region

Field region

U.V region

The colour of light emitted by a LED depends on.

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It forward biased

Its reverse biased

Unbiased

None of these

Doping is made comparatively larger in

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Emitter

Base

Collector

P -type semi conductor

LDR becomes necessary when op amp is used as a

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Night switch

Inverter

Comparator

Rectifier

Improper bisting of a transistor circiut produces:

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Heavy loading of emitter current

Distortion in the output output signal

Excessive heat at collector terminal

Faculty location of load line

The average gap for Germanium at 0K is

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1.12 ev

0.02 ev

6.72 ev

7.2 ev

In case of reverse biasing, current is flown due to:

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Minority charge carriers

Majority charge carriers

Electrons

Protons

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