Question # 1

An expression for gain of an inverting amplifier is

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(R₁R₂)

None of these

Base of transistor is of order:

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10^-11m

10⁶m

10^-8m

10^-6m

Which is not fundamental logic gate.

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NOT

AND

OR

NAND

For normal use:

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Emitter base function is reversed biased

Collector base junction is reserved biased

Emitter base junction is forward biased

Both c and b

Conversation of only one half of A.C. into D.C. is called.

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Half wave amplification

Wave amplification

Half wave electrification

Half wave rectification

In full wave rectification number of diodes required are equal to.

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2

3

4

5

The chargeless region after formation of Pn junction is called:

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Free region

Depletion region

Field region

U.V region

A transistor has:

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Two regions

Three regions

Single regions

Four regions

LDR becomes necessary when op amp is used as a

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Night switch

Inverter

Comparator

Rectifier

A light emitting diode emits light only when

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Reverse biased

Forward biased

Unbiased

None of these

Logic gate can control some physical parameters like.

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Temperature, Pressure

Resistance, Inductance

Capacitance, Impedance

Current, voltage

In a transistor, collector current is controlled by:

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Collector voltage

Base current

Collector resistance

All of the above

X=A+B is the mathematical notation for.

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OR gate

NOR gate

NAND gate

AND gate

Rectification is the process of converting.

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D.C. into A.C.

A.C. in to D.C.

Low signal to high

High signal to low

The sensor of light is.

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Transistor

LED

Diode

Light dependent resistance

In case of reverse biasing, current is flown due to:

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Minority charge carriers

Majority charge carriers

Electrons

Protons

The potential difference across the depletion region of germanium is.

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0.3 V

0.5 V

0.7 V

0.8 V

_______ is the building block of every electronic circuit.

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Semi conductor diode

Resistor

Capacitor

Amplifier

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