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Physics ICS Part 2 Chapter 18 Online MCQ's Test MCQs With Answers
Question # 1
Transistor was invented by:
Choose an answer
Bardeen
Micheal faraday
Lenz
Newton
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Question # 2
The gain of transistor amplifier depends upon
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Resistance connected with collector
Resistance connected with base voltage
Input voltage
Output voltage
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Question # 3
_______ is the building block of every electronic circuit.
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Semi conductor diode
Resistor
Capacitor
Amplifier
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Question # 4
The device which are required to convert various physical quantities into electric voltage are called.
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Filters
Rectifiers
Amplifiers
Sensors
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Question # 5
The use of LDR is in the circuit of.
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Logic gate
Rectifier
Oscillator
High Switch
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Question # 6
The chargeless region after formation of Pn junction is called:
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Free region
Depletion region
Field region
U.V region
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Question # 7
A device which converts low voltage or current to high voltage or current is called.
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Transformer
AC generator
Amplifier
Rectifier
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Question # 8
Transistor was discovered by
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Young
Curie
John Bardeen
Shale's
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Question # 9
For normal use:
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Emitter base function is reversed biased
Collector base junction is reserved biased
Emitter base junction is forward biased
Both c and b
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Question # 10
A photo diode can turn its current ON and OFF in
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Micro seconds
Mega seconds
Nano seconds
Mili seconds
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Question # 11
The colour of light emitted by a LED depends on.
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It forward biased
Its reverse biased
Unbiased
None of these
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Question # 12
The open loop gain of the amplifier is order of.
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10
6
10
5
10
7
10
3
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Question # 13
Photo diode is used for detection of.
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Heat
Magnet
Current
Light
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Question # 14
Automatic function of street light can be done by the use of.
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Inductor
Rectifier
Comparator
emf
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Question # 15
The potential difference across the depletion region of germanium is.
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0.3 V
0.5 V
0.7 V
0.8 V
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Question # 16
Minimum number of semi conductor diodes required for full wave rectification are.
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1
2
3
4
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Question # 17
A PN junction can not be sued a.
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Rectifier
Amplifier
Detector
LED
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Question # 18
The potential difference across depletion region in case of Si is
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0.6 volt
0.9 volt
0.7 volt
0.2 volt
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