Question # 1

In an N-type silicon, which of the following statement is true?

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Electrons are majority carriers & trivalent atoms are the dopants

Electrons are majority carriers & pentavalent atoms are the dopants

Holes are minority carriers & pentavalent atoms are the dopants.

Holes are minority carriers & trivavalent atoms are the dopants.

When a PN-Junction is reverse biased the depletion region is.

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Widened

Narrowed

Normal

None of these

Reverse current flows due to

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Majority charge carriers

Minority charge carriers

Electrons

Holes

The potential difference across depletion region in case of Si is

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0.6 volt

0.9 volt

0.7 volt

0.2 volt

The impurity in the germinium is usually in the ratio of

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1:10⁶

1:10⁴

1:10⁸

1:10¹⁰

The average gap for Germanium at 0K is

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1.12 ev

0.02 ev

6.72 ev

7.2 ev

In photovoltaic cell, current is directly proportional to.

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Wavelength of light

Intensity of light

Energy

Frequency of light

The P.D develop in case of germanium is:

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0.3

0.7

0.5

0.9

Transistor was discovered by

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Young

Curie

John Bardeen

Shale's

In case of op-amp as an inverting amplifier, V₊ - V_- = 0, this is because

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Open gain loop is very low

Closed loop gain is very high

Open loop gain is very high

Both (a) and (a)

A diode characteristics curve is a plot between

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Current and resistance

Voltage and time

Voltage and current

Current and time

the number of terminals in a semiconductor diode are

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2

3

4

5

Base of transistor is of order:

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10^-11m

10⁶m

10^-8m

10^-6m

The circuit of full wave rectification consist of

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Three diodes

Four diodes

Two diodes

One diode

For automatic Switching of streetlight, the op amplifier is used as.

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Inductor

Converter

Comparator

Thermistor

LDR becomes necessary when op amp is used as a

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Night switch

Inverter

Comparator

Rectifier

OR gate is represented by:

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X = A+B

X=A.B

X=A+B

X=A.B

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