Question # 1

Logic gate can control some physical parameters like.

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Temperature, Pressure

Resistance, Inductance

Capacitance, Impedance

Current, voltage

Reverse current flows due to

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Majority charge carriers

Minority charge carriers

Electrons

Holes

The ratio Beta in transistor is called.

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Voltage gain

Emitter gain

Current gain

Nuclear gain

For normal use:

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Emitter base function is reversed biased

Collector base junction is reserved biased

Emitter base junction is forward biased

Both c and b

The potential barrier for silicon is.

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0.7 V

0.5 V

0.3 V

0.9 V

For rectification we use.

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Transformer

Diode

Choke

Generator

A diode characteristic curve is a plot between

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Current and time

Voltage and time

Voltage and current

Forward voltage and reverse voltage

The device which is used as amplifier and works with the negative feedback is.

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Operational amplifier

P-n-p transistor

n-p-n transistor

Transistor

In case of reverse biasing, current is flown due to:

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Minority charge carriers

Majority charge carriers

Electrons

Protons

A photo diode can turn its current ON and OFF in

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Micro seconds

Mega seconds

Nano seconds

Mili seconds

The gain of transistor amplifier depends upon

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Resistance connected with collector

Resistance connected with base voltage

Input voltage

Output voltage

Which is not fundamental logic gate.

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NOT

AND

OR

NAND

The device which are required to convert various physical quantities into electric voltage are called.

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Filters

Rectifiers

Amplifiers

Sensors

The semi conductor diode has the property of

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Two way conduction

Zero conduction

One way conduction

Amplification

the number of terminals in a semiconductor diode are

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2

3

4

5

Conversation of only one half of A.C. into D.C. is called.

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Half wave amplification

Wave amplification

Half wave electrification

Half wave rectification

The average gap for Germanium at 0K is

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1.12 ev

0.02 ev

6.72 ev

7.2 ev

NAND gate represented by:

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X = A. B

X = A+B

X= A.B

X=|A+B|

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