Question # 1

In a certain circuit, I_{B = 40 µA,}I_C= 20 mA

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450 amp

0.45 amp

5 m amp

500 amp

Doping is made comparatively larger in

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Emitter

Base

Collector

P -type semi conductor

The gate, which changes the logic level to its opposite level is called

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NOR gate

AND gate

OR gate

NOT gate

Transistors are made from

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Plastics

Metals

Insulator

Doped semi conductors

Which is not fundamental logic gate.

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NOT

AND

OR

NAND

For rectification we use.

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Transformer

Diode

Choke

Generator

The output from a full wave rectifier is

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An ac voltage

A dc voltage

Zero

A pulsating unidirectional voltage

For normal use:

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Emitter base function is reversed biased

Collector base junction is reserved biased

Emitter base junction is forward biased

Both c and b

The average gap for Germanium at 0K is

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1.12 ev

0.02 ev

6.72 ev

7.2 ev

A.C. can be converted into D.C. by

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An oscillator

Detector

An amplifier

Rectifier

An expression for gain of an inverting amplifier is

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(R₁R₂)

None of these

In an N-type silicon, which of the following statement is true?

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Electrons are majority carriers & trivalent atoms are the dopants

Electrons are majority carriers & pentavalent atoms are the dopants

Holes are minority carriers & pentavalent atoms are the dopants.

Holes are minority carriers & trivavalent atoms are the dopants.

The open loop gain of the amplifier is order of.

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10⁶

10⁵

10⁷

10³

A PN junction can not be sued a.

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Rectifier

Amplifier

Detector

LED

In case of reverse biasing, current is flown due to:

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Minority charge carriers

Majority charge carriers

Electrons

Protons

Pulsating output of full wave rectifier can be made smooth by using circuit called.

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Filter

Amplifier

Resistor

Transistor

A transistor has parts:

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2

3

4

5

In a transistor, collector current is controlled by:

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Collector voltage

Base current

Collector resistance

All of the above

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Physics Fsc Part 2 Chapter 7 Online Test MCQs With Answers

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