Question # 1

The reverse saturation current in a PN junction diode is only due to:

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Majority carriers

Minoritycarriers

Acceptor ions

Donor ions

The ratio of potential barriers of Ge to Si at room temperatrue is.

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7:3

1:3

2:5

3:7

The p-n junction in which p side is connected to+ive and n-side is -ve the junction is said to be:

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Neutral

Forward biased

Reversed biased

None of above

Base of transistor is of order:

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10^-11m

10⁶m

10^-8m

10^-6m

The circuit of full wave rectification consist of

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Three diodes

Four diodes

Two diodes

One diode

The average gap for Germanium at 0K is

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1.12 ev

0.02 ev

6.72 ev

7.2 ev

During negative half cycle of A.c then p-n junction offers.

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High resistance

Low resistance

No resistance

All of these

One use of a single p-n junction semiconductor in an electrical circuit is a

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Rectifier

Transistor

Battery

Diode

The semi conductor diode has the property of

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Two way conduction

Zero conduction

One way conduction

Amplification

The colour of light emitted by a LED depends on.

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It forward biased

Its reverse biased

Unbiased

None of these

The sensor of light is.

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Transistor

LED

Diode

Light dependent resistance

The potential difference across depletion region in case of Si is

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0.6 volt

0.9 volt

0.7 volt

0.2 volt

In a transistor, collector current is controlled by:

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Collector voltage

Base current

Collector resistance

All of the above

The use of LDR is in the circuit of.

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Logic gate

Rectifier

Oscillator

High Switch

An expression for gain of an inverting amplifier is

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(R₁R₂)

None of these

The mathematical symbol for NOR operation is

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X = A . B

X = A + D

Improper bisting of a transistor circiut produces:

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Heavy loading of emitter current

Distortion in the output output signal

Excessive heat at collector terminal

Faculty location of load line

A PN junction can not be sued a.

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Rectifier

Amplifier

Detector

LED

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