Question # 1

The use of LDR is in the circuit of.

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Logic gate

Rectifier

Oscillator

High Switch

Output resistance of an op amp is

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High

Low

Zero

Equal to input resistance

Which device is used as a rectifier?

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Capacitor

Transistor

Diode

Transformer

The ratio of potential barriers of Ge to Si at room temperatrue is.

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7:3

1:3

2:5

3:7

The input resistance of an op amplifier is.

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Low

High

Zero

Equal to output resistance

Conversation of only one half of A.C. into D.C. is called.

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Half wave amplification

Wave amplification

Half wave electrification

Half wave rectification

Which diode works at reverse biasing.

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LED

Photo voltaic cell

Photo diode

Silicon diode

Which one has greater cone of impurity among all:

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Emitter

Base

Collector

All are pure

OR gate is represented by:

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X = A+B

X=A.B

X=A+B

X=A.B

An expression for gain of an inverting amplifier is

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(R₁R₂)

None of these

When a PN-Junction is reverse biased the depletion region is.

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Widened

Narrowed

Normal

None of these

Conversion of A.C into D.C is called:

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Compton effect

Rectification

Amplification

Pair production

The resistance between the inverting (-) and non inverting inputs is called Input resistance and is the order of.

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Ohms

Kilo Ohms

Mega Ohms

Thounds Ohms

Minimum number of semi conductor diodes required for full wave rectification are.

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1

2

3

4

A.C. can be converted into D.C. by

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An oscillator

Detector

An amplifier

Rectifier

In an N-type silicon, which of the following statement is true?

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Electrons are majority carriers & trivalent atoms are the dopants

Electrons are majority carriers & pentavalent atoms are the dopants

Holes are minority carriers & pentavalent atoms are the dopants.

Holes are minority carriers & trivavalent atoms are the dopants.

Which component of the transistor has greater contrition of impurity.

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Base

Emitter

Collector

Emitter and collector

Light emitting diodes are made from semiconductors.

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Silicon

Germanium

Carbon

Gallium arsenide

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