Question # 1

The intensity at a point due to a charge is inversely proportional to

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Amount of charge

Size of the charge

Distance between charge and the point

Square of the distance from the charge

None of these

In a transistor, collector current is controlled by

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Collector voltage

Base current

Collector resistance

All of the above

In an N-type silicon, which of the following statement is true

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Electrons are majority carriers and trivalent atoms are the dopants

Electrons are minority carriers and pentavalent atoms are the dopants

Holes are minority carriers and pentavalent atoms are the dopants

Holes are majority carriers and trivalent atoms are the dopants

Field lines are closer to each other in the region where the filed is

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Stronger

Weaker

Much weaker

Absent

None of these

In the forward biases situation, the current flowing across the p-n junction is a few:

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amperes

Milli amperes

Micro amperes

Pico amperes

None of these

A hole in p-type my be due to:

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Trivalent impurity

Breking of some covalent bond

Pentavalent impurity

Germanium

Either (A) or (B)

.Depletion region contains:

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Protons

Positive ions

Negative ions

Both (B) and (C)

Both (A) and (C)

If the distance between two charges is doubled, the force between them will become

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Double

Half

Three times

One fourth

One third

Majority charge carriers in the p-region of p-n junction are:

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electrons

positrons

Holes

Neutrons

None of these

A diode which can turn its current ON and OFF in nono seconds is called:

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LED

Photodiode

An ordinary diode.

Both (A) and (B)

Both (B) and (C)

If both the inputs given to a gate ae 1 such that the output is 0, then it is:

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AND gate

NOR gate

OR gate

NOT gate

Both (A) and (C)

In the text book, the transistor amplifier circuit is a:

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Common emitter circuit

Common collector circuit

Common base circuit

Any of these

None of these

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ECAT Physics Chapter 18 Electronics Online Test MCQs With Answers

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