Question # 1

Most of the electrons in the base of an NPN transistor flow

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Out of the base lead

Into the collector

Into the emit

Into the base supply

Silicon is one of the mot commonly used:

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onductor

Dielectric

Insulator

Semiconduction

Both (B) and (C)

The intensity at a point due to a charge is inversely proportional to

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Amount of charge

Size of the charge

Distance between charge and the point

Square of the distance from the charge

None of these

The number of input terminals of an op-amp is:

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One

Two

Three

Four

None of these

A potential barrier of 0.7 V exists across p-n junction made from:

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Germanium

Silicon

Arsenic

Gallium

Indium

Electric field lines emerge from the charges in

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One dimension

Two dimensions

Three dimensions

Four dimensions

None of these

In full wave rectification, simultaneous action is that:

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Two diodes conduct and two do not.

One diode conduct and three do not.

Three diodes conduct and one does not.

All the four diodes conduct

None of these

An electronic computer is basically a vast arrangement of electronic switches which are made from

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Resistors

Transistors

N -type crystals

P-Type crystals

Capacitors

By placing a dielectric in between the charges, the electrostatic force between them

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Is always reduced

Is always increased

Is not affected

Is increased one million times

None of these

In describing function of digital systems, 1 represents:

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Closed switch

True Statement

Lighted bulb

Only (B) and (C)

All are true

A hole in p-type my be due to:

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Trivalent impurity

Breking of some covalent bond

Pentavalent impurity

Germanium

Either (A) or (B)

Electric lines of force

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Intersect each other

Are always parallel

Are always anti-parallel

Never intersect

None of these

The electric field lines start from

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Positive charge

Negative charge

Either A or B

Neutron

An atom

The use of chips in electrons is described in the form of:

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Yellow boxes

Black boxes

Red boxes

White boxes

Orange boxes

In the forward biases situation, the current flowing across the p-n junction is a few:

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amperes

Milli amperes

Micro amperes

Pico amperes

None of these

All the valence electrons present in a crystal of silicon are bound in their orbits by

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Ionic bond

covalent bond

Molecular bond

Both (A) and (B)

Both (B) and (C)

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ECAT Physics Chapter 18 Electronics Online Test MCQs With Answers

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